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RTP-Q-switch

Introduction:

RTP crystal (Rubidium Titanyle Phosphate – RbTiOPO4) is a material now widely used for Electro Optical applications whenever low switching voltages are required.

RTP is an isomorph to Potassium Titanyl Phosphate (KTiOPO4, KTP), a highly efficient non-linear crystalline material. RTP single crystals are grown by a slow-cooling flux method. The saturation point at the start of crystal growth is set by using a seed-tentative method. The growth temperature ranges from 800°C to 950°C with a growth period between 45 and 60 days.

RTP crystal appealing because it is not sensitive to moisture, easy to handle and coat, and also it does not exhibit piezo-electric ringing at elevated repetition rate. Moreover, RTP exhibits high electro-optic coefficients that allow the monitoring of Pockels cell with low power voltage requirement.

As RTP is transparent from 0.4 to 3.5µm, it can be used in multiple types of laser such as Er:YAG laser at 2.94µm with fairly good efficiency. Bulk absorption measurements at 1.064µm range from 50 to 150ppm using Photothermal Common Path Interferometer.

RTP has a fairly high surface damage threshold measured by SPICATEC at 15J/cm² (1064nm, 10ns, 10Hz).

Physical and Chemical Properties:

Crystal Structure

Orthorhombic,

Lattice Parameters

a = 12.96 Å,b = 10.56 Å,c = 6.49 Å

Density

3.6 g/cm3

Melting Point

~ 1000 °C

Ferroeletric transition temperature

~810°C

Mohs Hardness

~5

Thermal Expansion Coefficients,/°C

a1=1.01x10^-5, a2=1.37x10^-5, a3=-4.17x10^-6

Hygroscopic Susceptibility

No

Dielectric Constant

Eeff = 13.0,

Color

Colorless

Ionic conductivity
(room temperature, 10kHz)

10^-8 S/cm

Optical properties:

Transmitting range:

350~4500 nm

Sellmeier equations:
Ni^2=Ai+Bi[1-(Ci/λ)^2]-Diλ^2

index

A

B

C

D

 

Nx

2.15559

0.93307

0.20994

0.01452

 

Ny

2.38494

0.73603

0.23891

0.01583

 

Nz

2.27723

1.11030

0.23454

0.01995

Absorption coefficient:

< 0.05 % / cm @ 1064 nm < 4 % /cm @ 532 nm

 

Nonlinear properties:

 

Nonlinear Coefficients:

d15 = 2.0 pm/V

 

d24 = 3.6 pm/V

 

d31 = 2.0 pm/V

 

d32 = 3.6 pm/V

 

d33 = 8.3 pm/V

 

deff for type II SHG@1064nm= 2.39 pm/V

Electro-optic coefficients:(pm/V)

X-cut Propagation Low frequency

Y-cut Propagation Low frequency

r13

10.6

r23

12.5

r33

35

38.5

Static Half Wave Voltage @1064nm:

1445 V for a pair of 4x4x10mm

 

1600 V for a pair of 4x4x20mm

 

1700 V for a pair of 6x6x7mm

 

2400 V for a pair of 6x6x20 mm


Damage Threshold:10 nsec pulse

 600 MW/cm2 @ 1064 nm,

Contrast Ratio:

  20 dB @ 633 nm

 

Advantages:

an excellent crystal for Electro Optical applications at high repetition rate.

High Damage Threshold

No Piezoelectric Ringing

Low Insertion Loss

Thermal Compensating Design

Non-hygroscopic

High Extinction and Contrast Ratio

Spectral range 500-3000 nm

not induce piezo-electric effect .


Application:

 SHG Nd: lasers at 1064nm

 Electro-Optical Q-switch and modulation for Optical waveguides

 Optical Parametric Amplifiers (OPA) and Oscillators (OPO) application;


THATSHIGH specifications for RTP Crystal

Dimension tolerance:

± 0.1mm

Flatness:

λ/8 @633nm

Scratch/Dig:

10/5(MIL-PRF-13830B)

Parallelism:

better than 20 arc sec

Perpendicularity:

better than 5 arc min

Angle tolerance:

<± 0.2°

Coating:

AR coating and Au-Cr electrode

Clear aperture:

>90% central area

Transmitting wavefront distortion:

λ/8 @633nm

 

RTP Crystal Order Information
RTP E-O crystal, RTP pockels cells, thermal compensating RTP crystals are available. Please send us an email to request for RTP crystal.



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